The next generation of small packaging - featuring currents up to 3 A on a 1.1 mm2 footprint
The DFN1010 can be used for new designs in space constrained application and replace larger packages in the same RDSon range.
| Package | Package name | Dimension (mm) | Applications |
|---|---|---|---|
 | 1.1 x 1.0 x 0.37 |
| |
 | 1.1 x 1.0 x 0.37 |
主要特性和優(yōu)勢
Features and benefits
- N-channel and P-channel
- Low RDSon down to 34 m?
- ID up to 3.2 A
- Low voltage drive (VGS(th) = 0.65 V [typ])
- Voltage range of 12 to 80 V
- ESD protection of more than 1 kV
Related package information
Parametric search
DFN1010 MOSFETs
數(shù)據(jù)加載中，請稍候...參數(shù)搜索不可用。
Products
Automotive qualified products (AEC-Q100/Q101)
| 型號 | 描述 | 狀態(tài) | 快速訪問 |
|---|---|---|---|
| PMXB360ENEA | 80 V, N-channel Trench MOSFET | Production |
MOSFETs
| 型號 | 描述 | 狀態(tài) | 快速訪問 |
|---|---|---|---|
| PMXB360ENEA | 80 V, N-channel Trench MOSFET | Production | |
| PMXB56EN | 30 V, N-channel Trench MOSFET | Production | |
| PMXB350UPE | 20 V, P-channel Trench MOSFET | Production | |
| PMXB65ENE | 30 V, N-channel Trench MOSFET | Production | |
| PMXB120EPE | 30 V, P-channel Trench MOSFET | Production | |
| NX7002BKXB | 60 V, dual N-channel Trench MOSFET | Production | |
| PMDXB290UNE | 20 V, dual N-channel Trench MOSFET | Production | |
| PMCXB1000UE | 30 V, complementary N/P-channel Trench MOSFET | Production | |
| PMCXB290UE | 20 V, complementary N/P-channel Trench MOSFET | Production | |
| PMDXB590UPE | 20 V, dual P-channel Trench MOSFET | Production | |
| PMXB40UNE | 12 V, N-channel Trench MOSFET | Production | |
| PMXB43UNE | 20 V, N-channel Trench MOSFET | Production | |
| PMDXB550UNE | 30 V, dual N-channel Trench MOSFET | Production | |
| PMDXB1200UPE | 30 V, dual P-channel Trench MOSFET | Production | |
| PMDXB950UPE | 20 V, dual P-channel Trench MOSFET | Production | |
| PMCXB900UE | 20 V, complementary N/P-channel Trench MOSFET | Production | |
| PMXB65UPE | 12 V, P-channel Trench MOSFET | Production | |
| PMXB75UPE | 20 V, P-channel Trench MOSFET | Production | |
| PMDXB600UNE | 20 V, dual N-channel Trench MOSFET | Production | |
| PMDXB600UNEL | 20 V, dual N-channel Trench MOSFET | Production | |
| PMDXB950UPEL | 20 V, dual P-channel Trench MOSFET | Production | |
| PMCXB900UEL | 20 V, complementary N/P-channel Trench MOSFET | Production |
Documentation
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| DFN1010-6_SOT891_mk.png | plastic, extremely thin small outline package; 6 terminals; 0.55 mm pitch; 1 mm x 1 mm x 0.5 mm body | Marcom graphics | 2017-01-28 |
| vp_1400573678841.zip | DFN1010 | Value proposition | 2017-04-06 |
| Nexperia_package_poster.pdf | Nexperia package poster | Leaflet | 2020-05-15 |
| AN90023.pdf | Thermal performance of DFN packages | Application note | 2020-11-23 |
| Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
如果您有支持方面的疑問，請告知我們。如需獲得設計支持，請告知我們并填寫應答表，我們會盡快回復您。
請訪問我們的聯(lián)系我們或{1}。