參數(shù)搜索
650 V e-mode GaN FETs
數(shù)據(jù)加載中，請(qǐng)稍候...參數(shù)搜索不可用。
產(chǎn)品
| 型號(hào) | 描述 | 狀態(tài) | 快速訪問(wèn) |
|---|---|---|---|
| GAN080-650EBE | 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8?mm?x?8?mm package | Production | |
| GAN140-650EBE | 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8?mm?x?8?mm package | Production | |
| GAN140-650FBE | 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5?mm?x?6?mm package | Production | |
| GAN190-650EBE | 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8?mm?x?8?mm package | Production | |
| GAN190-650FBE | 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5?mm?x?6?mm package | Production | |
| GANE140-700BBA | 700 V, 140 mOhm Gallium Nitride (GaN) FET in DPAK package | Production | |
| GANE190-700BBA | 700 V, 190 mOhm Gallium Nitride (GaN) FET in DPAK package | Production | |
| GANE240-700BBA | 700 V, 240 mOhm Gallium Nitride (GaN) FET in DPAK package | Production | |
| GANE350-650FBA | 650 V, 350 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package | Production | |
| GANE350-700BBA | 700 V, 350 mOhm Gallium Nitride (GaN) FET in DPAK package | Production |
Visit our documentation center for all documentation
Application note (2) |
|||
|---|---|---|---|
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
| AN90041.pdf | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
| AN90021.pdf | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
Leaflet (2) |
|||
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
| nexperia_document_leaflet_GaNFETs_2025.pdf | Power GaN FETs | Leaflet | 2025-03-10 |
| nexperia_document_leaflet_GaNFETs_2025-CHN.pdf | Power GaN FETs Chinese | Leaflet | 2025-03-10 |
Marcom graphics (1) |
|||
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
| DFN8080-8_SOT8074-1-combi_mk.png | plastic thermal enhanced small outline package; no leads; 8 terminals; body: 8 x 8 x 0.9 mm | Marcom graphics | 2023-04-20 |
User manual (1) |
|||
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
| UM90045.pdf | NX-HB-GAN111UL 2.0 kW half-bridge evaluation board user guide | User manual | 2025-02-10 |
White paper (3) |
|||
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese.pdf | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN.pdf | 白皮書: 功率GaN技術(shù)： 高效功率轉(zhuǎn)換的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion.pdf | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
如果您有支持方面的疑問(wèn)，請(qǐng)告知我們。如需獲得設(shè)計(jì)支持，請(qǐng)告知我們并填寫技術(shù)支持表格，我們會(huì)盡快回復(fù)您。
請(qǐng)?jiān)L問(wèn)我們的社區(qū)論壇或聯(lián)系我們。