可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| 74AUP1G3208GX | 74AUP1G3208GXZ | 935308466147 | SOT1255-2 | 訂單產(chǎn)品 |
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Click here for more information74AUP1G3208GX
Low-power 3-input OR-AND gate
The 74AUP1G3208 is a single 3-input OR-AND gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Overvoltage tolerant inputs to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
參數(shù)類型
| 型號 | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
|---|---|---|---|---|---|---|---|---|---|
| 74AUP1G3208GX | 0.8?-?3.6 | CMOS | ± 1.9 | 7.4 | 70 | 1 | ultra low | -40~125 | X2SON6 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74AUP1G3208GX | 74AUP1G3208GXZ (935308466147) |
Active | a2 |
X2SON6 (SOT1255-2) |
SOT1255-2 | SOT1255-2_147 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74AUP1G3208GX | 74AUP1G3208GXZ | 74AUP1G3208GX |
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Series
文檔 (9)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74AUP1G3208 | Low-power 3-input OR-AND gate | Data sheet | 2023-07-18 |
| SOT1255-2 | 3D model for products with SOT1255-2 package | Design support | 2021-01-28 |
| aup1g3208 | 74AUP1G3208 IBIS model | IBIS model | 2016-02-24 |
| Nexperia_document_Logic_CombinationLogic_infocard_201710 | Combination logic solutions card | Leaflet | 2019-08-09 |
| Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
| Nexperia_document_leaflet_Logic_X2SON_packages_062018 | X2SON ultra-small 4, 5, 6 & 8-pin leadless packages | Leaflet | 2018-06-05 |
| SOT1255-2 | plastic thermal enhanced extremely thin small outline package; no leads;6 terminals; body 1.0 x 0.8 x 0.32 mm | Package information | 2020-08-27 |
| SOT1255-2_147 | X2SON6; Reel pack for SMD, 7''; Q2/T3 product orientation | Packing information | 2020-05-08 |
| 74AUP1G3208GX_Nexperia_Product_Reliability | 74AUP1G3208GX Nexperia Product Reliability | Quality document | 2025-03-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| 74AUP1G3208GX | 74AUP1G3208GXZ | 935308466147 | Active | SOT1255-2_147 | 10,000 |
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樣品
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如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.