可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| 74HC1G66GV | 74HC1G66GV,125 | 935271887125 | SOT753 | 訂單產(chǎn)品 |
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Click here for more information74HC1G66GV
Single-pole single-throw analog switch
The 74HC1G66; 74HCT1G66 is a single-pole, single-throw analog switch with two input/output terminals (nY and nZ) and a digital enable input (nE). When nE is LOW, the analog switch is turned off. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.
The HCT device features control inputs with reduced input threshold levels to allow interfacing to TTL logic levels.
Alternatives
Features and benefits
Wide supply voltage range from 2.0 V to 10.0 V
Very low ON resistance:
45 Ω (typ.) at VCC = 4.5 V
30 Ω (typ.) at VCC = 6.0 V
25 Ω (typ.) at VCC = 9.0 V
High noise immunity
CMOS low power dissipation
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
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Complies with JEDEC standards:
JESD8C (2.7 V to 3.6 V)
JESD7A (2.0 V to 6.0)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C and -40 °C to +125 °C
參數(shù)類型
| 型號 | Configuration | VCC (V) | Logic switching levels | RON (Ω) | RON(FLAT) (Ω) | f(-3dB) (MHz) | THD (%) | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 74HC1G66GV | SPST-NO | 2.0?-?9.0 | CMOS | 105 | 23 | 200 | 0.02 | very low | -40~125 | 216 | 30.4 | 128 | TSOP5 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74HC1G66GV | 74HC1G66GV,125 (935271887125) |
Active | H66 |
TSOP5 (SOT753) |
SOT753 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT753_125 |
Series
文檔 (12)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| 74HC_HCT1G66 | Single-pole single-throw analog switch | Data sheet | 2024-07-09 |
| AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
| AN11044 | Pin FMEA 74HC/74HCT family | Application note | 2019-01-09 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT753 | 3D model for products with SOT753 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT753 | plastic, surface-mounted package; 5 leads; 0.95 mm pitch; 2.9 mm x 1.5 mm x 1 mm body | Package information | 2022-05-31 |
| SOT753_125 | TSOP5; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-04-21 |
| 74HC1G66GV_Nexperia_Product_Reliability | 74HC1G66GV Nexperia Product Reliability | Quality document | 2025-03-20 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| MAR_SOT753 | MAR_SOT753 Topmark | Top marking | 2013-06-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| SOT753 | 3D model for products with SOT753 package | Design support | 2019-01-22 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| 74HC1G66GV | 74HC1G66GV,125 | 935271887125 | Active | SOT753_125 | 3,000 |
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樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.