可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| 74LVC2G14GW-Q100 | 74LVC2G14GW-Q100H | 935301405125 | SOT363-2 | 訂單產(chǎn)品 |
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Click here for more information74LVC2G14GW-Q100
Dual inverting Schmitt trigger with 5 V tolerant input
The 74LVC2G14-Q100 is a dual inverter with Schmitt-trigger inputs. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.
This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 1.65 V to 5.5 V
High noise immunity
±24 mA output drive (VCC = 3.0 V)
CMOS low power dissipation
Direct interface with TTL levels
Unlimited rise and fall times
Overvoltage tolerant inputs to 5.5 V
IOFF circuitry provides partial Power-down mode operation
Latch-up performance exceeds 250 mA
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
JESD36 (4.5 V to 5.5 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Applications
Wave and pulse shaper
Astable multivibrator
Monostable multivibrator
參數(shù)類型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|
| 74LVC2G14GW-Q100 | 1.65?-?5.5 | CMOS/LVTTL | ± 32 | 175 | 2 | low | -40~125 | 264 | 38.4 | 153 | TSSOP6 |
PCB Symbol, Footprint and 3D Model
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封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74LVC2G14GW-Q100 | 74LVC2G14GW-Q100H (935301405125) |
Active | VK |
TSSOP6 (SOT363-2) |
SOT363-2 | SOT363-2_125 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74LVC2G14GW-Q100 | 74LVC2G14GW-Q100H | 74LVC2G14GW-Q100 |
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Series
文檔 (6)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74LVC2G14_Q100 | Dual inverting Schmitt trigger with 5 V tolerant input | Data sheet | 2023-08-18 |
| SOT363-2 | 3D model for products with SOT363-2 package | Design support | 2023-02-02 |
| lvc2g14 | 74LVC2G14 IBIS model | IBIS model | 2014-10-20 |
| SOT363-2 | plastic thin shrink small outline package; 6 leads; body width 1.25 mm | Package information | 2022-11-21 |
| SOT363-2_125 | TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2022-11-04 |
| 74LVC2G14GW-Q100_Nexperia_Product_Reliability | 74LVC2G14GW-Q100 Nexperia Product Reliability | Quality document | 2025-03-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
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訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| 74LVC2G14GW-Q100 | 74LVC2G14GW-Q100H | 935301405125 | Active | SOT363-2_125 | 3,000 |
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樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.