可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| 74LVC2GU04GN | 74LVC2GU04GN,132 | 935291805132 | SOT1115 | 訂單產(chǎn)品 |
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Click here for more information74LVC2GU04GN
Dual unbuffered inverter
The 74LVC2GU04 is a dual unbuffered inverter. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.
Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
Overvoltage tolerant inputs to 5.5 V
High noise immunity
±24 mA output drive (VCC = 3.0 V)
CMOS low power dissipation
Latch-up performance exceeds 250 mA
Complies with JEDEC standard no. 8-1A
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
參數(shù)類型
| 型號(hào) | VCC (V) | Logic switching levels | Output drive capability (mA) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|
| 74LVC2GU04GN | 1.65?-?5.5 | CMOS/LVTTL | ± 32 | 175 | 2 | low | -40~125 | 274 | 170 | XSON6 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74LVC2GU04GN | 74LVC2GU04GN,132 (935291805132) |
Active | YD |
XSON6 (SOT1115) |
SOT1115 |
REFLOW_BG-BD-1
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SOT1115_132 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74LVC2GU04GN | 74LVC2GU04GN,132 | 74LVC2GU04GN |
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Series
文檔 (13)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74LVC2GU04 | Dual unbuffered inverter | Data sheet | 2023-08-25 |
| AN11009 | Pin FMEA for LVC family | Application note | 2019-01-09 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
| SOT1115 | 3D model for products with SOT1115 package | Design support | 2023-02-02 |
| lvc2gu04 | 74LVC2GU04 IBIS model | IBIS model | 2014-10-20 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| XSON6_SOT1115_mk | plastic, extremely thin small outline package; 6 terminals; 0.55 mm pitch; 0.9 mm x 1 mm x 0.35 mm body | Marcom graphics | 2017-01-28 |
| SOT1115 | plastic, leadless extremely thin small outline package; 6 terminals; 0.3 mm pitch; 0.9 mm x 1 mm x 0.35 mm body | Package information | 2022-05-27 |
| SOT1115_132 | XSON6; Reel pack for SMD, 7''; Q3/T4 product orientation | Packing information | 2020-04-21 |
| 74LVC2GU04GN_Nexperia_Product_Reliability | 74LVC2GU04GN Nexperia Product Reliability | Quality document | 2025-03-20 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| MAR_SOT1115 | MAR_SOT1115 Topmark | Top marking | 2013-06-03 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| 74LVC2GU04GN | 74LVC2GU04GN,132 | 935291805132 | Active | SOT1115_132 | 5,000 |
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樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.