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Click here for more information74LVT16245BEV
3.3 V 16-bit transceiver; 3-state
The 74LVT16245B; 74LVTH16245B is a 16?-?bit transceiver with 3?-?state outputs. The device can be used as two 8?-?bit transceivers or one 16?-?bit transceiver. The device features two output enables (1OE and 2OE) each controlling eight outputs, and two send/receive (1DIR and 2DIR) inputs for direction control. A HIGH on nOE causes the outputs to assume a high?-?impedance OFF?-?state. Bus hold data inputs eliminate the need for external pull?-?up resistors to define unused inputs
Features and benefits
16-bit bidirectional bus interface
3-state buffers
Wide supply voltage range from 2.7 to 3.6 V
Overvoltage tolerant inputs to 5.5 V
BiCMOS high speed and output drive
Output capability: +64 mA and -32 mA
Direct interface with TTL levels
Input and output interface capability to systems at 5 V supply
Bus hold data inputs eliminate need for external pull-up resistors to hold unused inputs
Live insertion and extraction permitted
Power-up 3-state
No bus current loading when output is tied to 5 V bus
IOFF circuitry provides partial Power-down mode operation
Latch-up performance exceeds 500 mA per JESD 78 Class II Level B
Complies with JEDEC standard JESD8C (2.7 V to 3.6 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to 85 °C
參數(shù)類型
| 型號(hào) | Package name |
|---|---|
| 74LVT16245BEV | VFBGA56 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74LVT16245BEV | 74LVT16245BEV,118 (935270795118) |
Obsolete | LVT16245B Standard Procedure Standard Procedure | no package information | |||
| 74LVT16245BEV,151 (935270795151) |
Obsolete | LVT16245B Standard Procedure Standard Procedure | |||||
| 74LVT16245BEV,157 (935270795157) |
Obsolete | LVT16245B Standard Procedure Standard Procedure | |||||
| 74LVT16245BEV,518 (935270795518) |
Obsolete | LVT16245B Standard Procedure Standard Procedure | |||||
| 74LVT16245BEVE (935270795551) |
Obsolete | LVT16245B Standard Procedure Standard Procedure | |||||
| 74LVT16245BEVK (935270795557) |
Obsolete | LVT16245B Standard Procedure Standard Procedure | |||||
| 74LVT16245BEV/G,51 (935281133518) |
Obsolete | LVT16245B Standard Procedure Standard Procedure | |||||
| 74LVT16245BEV/G,55 (935281133551) |
Obsolete | LVT16245B Standard Procedure Standard Procedure | |||||
| 74LVT16245BEV/G:55 (935281133557) |
Obsolete | LVT16245B Standard Procedure Standard Procedure | |||||
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74LVT16245BEV | 74LVT16245BEV,118 | 74LVT16245BEV |
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| 74LVT16245BEV | 74LVT16245BEV,151 | 74LVT16245BEV |
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| 74LVT16245BEV | 74LVT16245BEV,157 | 74LVT16245BEV |
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| 74LVT16245BEV | 74LVT16245BEV,518 | 74LVT16245BEV |
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| 74LVT16245BEV | 74LVT16245BEVE | 74LVT16245BEV |
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| 74LVT16245BEV | 74LVT16245BEVK | 74LVT16245BEV |
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| 74LVT16245BEV | 74LVT16245BEV/G,51 | 74LVT16245BEV |
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| 74LVT16245BEV | 74LVT16245BEV/G,55 | 74LVT16245BEV |
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| 74LVT16245BEV | 74LVT16245BEV/G:55 | 74LVT16245BEV |
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Series
文檔 (2)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74LVT_LVTH16245B | 3.3 V 16-bit transceiver; 3-state | Data sheet | 2024-07-08 |
| lvt16245b | lvt16245b IBIS model | IBIS model | 2013-04-09 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| lvt16245b | lvt16245b IBIS model | IBIS model | 2013-04-09 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.