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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

BSP254A

P-channel vertical D-MOS intermediate level FET

Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

此產品已停產

Features and benefits

  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for use with all 5 V logic families

Applications

  • High-speed line drivers
  • Line current interruptors in relay
  • Line transformer drivers

參數(shù)類型

型號 Product status Release date
BSP254A End of life 2010-08-03

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
BSP254A BSP254A,112
(933981790112)
Obsolete no package information
BSP254A,126
(933981790126)
Obsolete

環(huán)境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
BSP254A BSP254A,112 BSP254A    
BSP254A BSP254A,126 BSP254A rohs rhf rhf
品質及可靠性免責聲明

文檔 (5)

文件名稱 標題 類型 日期
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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