可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| BUK7S2R0-40H | BUK7S2R0-40HJ | 934661316118 | SOT1235 | 訂單產(chǎn)品 |
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Click here for more informationBUK7S2R0-40H
N-channel 40 V, 2 mOhm standard level MOSFET in LFPAK88
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability.
Features and benefits
Fully automotive qualified to beyond AEC-Q101:
-55 °C to +175 °C rating suitable for thermally demanding environments
LFPAK88 package:
Designed for smaller footprint and improved power density over older wire bond packages such as D2PAK for today’s space constrained high power automotive applications
Thin package and copper clip enables LFPAK88 to be highly efficient thermally
LFPAK copper clip technology enabling improvements over wire bond packages by:
Increased maximum current capability and excellent current spreading
Improved RDSon
Low source inductance
Low thermal resistance Rth
LFPAK Gull Wing leads:
Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joint
Unique 40 V Trench 9 superjunction technology:
Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint
Improved SOA and avalanche capability compared to standard TrenchMOS
Tight VGS(th) limits enable easy paralleling of MOSFETs
Applications
12 V automotive systems
48 V DC/DC systems (on 12 V secondary side)
Higher power motors, lamps and solenoid control
Reverse polarity protection
Ultra high performance power switching
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK7S2R0-40H | SOT1235 | LFPAK88 | Production | N | 1 | 40 | 2 | 175 | 190 | 9 | 50 | 183 | 25 | 3 | Y | 3625 | 950 | 2021-01-28 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK7S2R0-40H | BUK7S2R0-40HJ (934661316118) |
Active | 7S2R040H |
LFPAK88 (SOT1235) |
SOT1235 |
REFLOW_BG-BD-1
|
SOT1235_118 |
Series
文檔 (19)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| BUK7S2R0-40H | N-channel 40 V, 2 mOhm standard level MOSFET in LFPAK88 | Data sheet | 2025-01-10 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-02-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90003 | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
| AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
| AN90017 | Load switches for mobile and computing applications | Application note | 2020-09-02 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| SOT1235 | 3D model for products with SOT1235 package | Design support | 2020-01-22 |
| SOT1235 | 3D model for products with SOT1235 package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK88_sot1235_mk | plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body | Marcom graphics | 2019-04-10 |
| BUK7xxxx-40H_LTspice_V3 | BUK7xxxx-40H Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2022-09-26 |
| SOT1235 | plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body | Package information | 2022-05-30 |
| SOT1235_118 | LFPAK88; Reel pack, SMD, 13"; Q1/T1 standard product orientation; Orderable part number ending ,118 or Z; Ordering code (12NC) ending 118 | Packing information | 2020-04-21 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| BUK7S2R0-40H | BUK7S2R0-40H SPICE model | SPICE model | 2021-04-12 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| BUK7S2R0-40H_Cauer | BUK7S2R0-40H Cauer thermal model | Thermal model | 2021-04-12 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| SOT1235 | 3D model for products with SOT1235 package | Design support | 2020-01-22 |
| BUK7xxxx-40H_LTspice_V3 | BUK7xxxx-40H Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2022-09-26 |
| BUK7S2R0-40H | BUK7S2R0-40H SPICE model | SPICE model | 2021-04-12 |
| BUK7S2R0-40H_Cauer | BUK7S2R0-40H Cauer thermal model | Thermal model | 2021-04-12 |
| SOT1235 | 3D model for products with SOT1235 package | Design support | 2020-01-22 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| BUK7S2R0-40H | BUK7S2R0-40HJ | 934661316118 | Active | SOT1235_118 | 2,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.