可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| BUK9K18-40E | BUK9K18-40E,115 | 934067072115 | SOT1205 | 訂單產(chǎn)品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationBUK9K18-40E
Dual N-channel 40 V, 19.5 m? logic level MOSFET
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
Features and benefits
Dual MOSFET
Q101 Compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK9K18-40E | SOT1205 | LFPAK56D; Dual LFPAK | Production | N | 2 | 40 | 16 | 19.5 | 175 | 30 | 3 | 14.5 | 38 | 16.2 | 1.7 | Y | 796 | 137 | 2012-07-23 |
封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK9K18-40E | BUK9K18-40E,115 (934067072115) |
Active | 91840E |
LFPAK56D; Dual LFPAK (SOT1205) |
SOT1205 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT1205_115 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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描述 For ADAS and automotive electrification, functional safety is increasingly vital. NXP's evaluation board for the FS86 Safety SBC for domain control (ASIL B and D) highlights it's power capability, the safety integration and system scalability of domain controller applications to address multiple MCU requirements. Several Nexperia parts feature on this board.
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類型 Reference design
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Quick links
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Shop link
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環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK9K18-40E | BUK9K18-40E,115 | BUK9K18-40E |
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Series
文檔 (23)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK9K18-40E | Dual N-channel 40 V, 19.5 mΩ logic level MOSFET | Data sheet | 2018-04-05 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-03-20 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90003 | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
| SOT1205 | 3D model for products with SOT1205 package | Design support | 2017-06-30 |
| nexperia_document_leaflet_LFPAK56D_factsheet_LR_201708 | LFPAK56D the ultimate dual MOSFET | Leaflet | 2017-08-17 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK56D_SOT1205_mk | plastic, single ended surface mounted package (LFPAK56D); 8 leads; 1.27 mm pitch; 4.7 mm x 5.3 mm x 1.05 mm body | Marcom graphics | 2017-01-28 |
| BUK9xxxx-40E_LTspice_V3 | BUK9xxxx-40E Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2022-12-14 |
| SOT1205 | plastic, single ended surface mounted package (LFPAK56D); 8 leads | Package information | 2022-03-11 |
| SOT1205_115 | LFPAK56D; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2021-01-11 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| BUK9K18-40E | BUK9K18-40E Spice model | SPICE model | 2012-09-12 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| BUK9K18-40E_RC_Thermal_Model | BUK9K18-40E Thermal design model | Thermal design | 2021-01-18 |
| BUK9K18-40E | BUK9K18-40E Thermal model | Thermal model | 2012-09-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK9xxxx-40E_LTspice_V3 | BUK9xxxx-40E Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2022-12-14 |
| BUK9K18-40E | BUK9K18-40E Spice model | SPICE model | 2012-09-12 |
| BUK9K18-40E_RC_Thermal_Model | BUK9K18-40E Thermal design model | Thermal design | 2021-01-18 |
| BUK9K18-40E | BUK9K18-40E Thermal model | Thermal model | 2012-09-03 |
| SOT1205 | 3D model for products with SOT1205 package | Design support | 2017-06-30 |
訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| BUK9K18-40E | BUK9K18-40E,115 | 934067072115 | Active | SOT1205_115 | 1,500 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.