可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| NXS0101GW | NXS0101GWH | 935289724125 | SOT363-2 | 訂單產(chǎn)品 |
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Click here for more informationNXS0101GW
Dual supply translating transceiver; open drain; auto?direction?sensing
The NXS0101 is a 1-bit, dual supply translating transceiver with auto direction sensing, that enables bidirectional voltage level translation. It features one 1-bit input-output port (A and B), one output enable input (OE) and two supply pins (VCC(A) and VCC(B)). VCC(A) can be supplied at any voltage between 1.65 V and 3.6 V and VCC(B) can be supplied at any voltage between 2.3 V and 5.5 V, making the device suitable for translating between any of the voltage nodes (1.8 V, 2.5 V, 3.3 V and 5.0 V). Pins A and OE are referenced to VCC(A) and pin B is referenced to VCC(B). A LOW level at pin OE causes the output to assume a high-impedance OFF-state. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.
Alternatives
Features and benefits
Wide supply voltage range:
VCC(A): 1.65 V to 3.6 V and VCC(B): 2.3 V to 5.5 V
Maximum data rates:
Push-pull: 24 Mbps
IOFF circuitry provides partial Power-down mode operation
Inputs accept voltages up to 5.5 V
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2500 V for A port
HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V for B port
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1500 V
Latch-up performance exceeds 100 mA per JESD 78B Class II
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
Applications
Desktop PC
Handset
Smartphone
Tablet
參數(shù)類型
| 型號(hào) | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name | Category |
|---|---|---|---|---|---|---|---|---|---|---|
| NXS0101GW | 1.65?-?3.6 | 2.3?-?5.5 | CMOS | - 0.02 / 1.0 | 4.7 | 1 | low | -40~125 | TSSOP6 | Bi-directional | AutoSense |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NXS0101GW | NXS0101GWH (935289724125) |
Active | m1 |
TSSOP6 (SOT363-2) |
SOT363-2 | SOT363-2_125 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| NXS0101GW | NXS0101GWH | NXS0101GW |
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文檔 (7)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| NXS0101 | Dual supply translating transceiver; open drain; auto?direction?sensing | Data sheet | 2023-11-16 |
| AN90014 | Pin FMEA for NXS family | Application note | 2020-03-25 |
| SOT363-2 | 3D model for products with SOT363-2 package | Design support | 2023-02-02 |
| nxs0101 | NXS0101 IBIS model | IBIS model | 2020-11-05 |
| SOT363-2 | plastic thin shrink small outline package; 6 leads; body width 1.25 mm | Package information | 2022-11-21 |
| SOT363-2_125 | TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2022-11-04 |
| NXS0101GW_Nexperia_Product_Reliability | NXS0101GW Nexperia Product Reliability | Quality document | 2025-03-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| NXS0101GW | NXS0101GWH | 935289724125 | Active | SOT363-2_125 | 3,000 |
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樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.