可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PBSS305PX-Q | PBSS305PX-QX | 934667748115 | SOT89 | 訂單產(chǎn)品 |
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Click here for more informationPBSS305PX-Q
80 V, 4.0 A PNP low VCEsat transistor
PNP low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS305NX-Q
Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
參數(shù)類型
| 型號(hào) | Package version | Package name | Size (mm) | channel type (e) | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | ICM [max] (A) | hFE [min] | hFE [typ] | fT [typ] (MHz) | RCEsat@IC [typ] (mΩ) | RCEsat@IC [typ] (mΩ) | RCEsat@IC [typ] (mΩ) | RCEsat@IC [max] (mΩ) | RCEsat@IC [max] (mΩ) | RCEsat@IC [max] (mΩ) | VCEsat [max] (mV) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS305PX-Q | SOT89 | SOT89 | 4.5 x 2.5 x 1.5 | PNP | 2100 | -80 | -4 | -8 | 200 | 280 | 100 | 100 | 58 | 43 | 140 | 83 | 60 | -420 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS305PX-Q | PBSS305PX-QX (934667748115) |
Active | %5M |
(SOT89) |
SOT89 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT89_115 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS305PX-Q | PBSS305PX-QX | PBSS305PX-Q |
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文檔 (11)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSS305PX-Q | 80 V, 4.0 A PNP low VCEsat transistor | Data sheet | 2024-02-14 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| PBSS4021NX | 20 V, 7 A NPN low VCEsat transistor | Data sheet | 2025-01-16 |
| PBSS4041NX | 60 V, 6.2 A NPN low VCEsat transistor | Data sheet | 2025-01-16 |
| SOT89 | 3D model for products with SOT89 package | Design support | 2018-12-05 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT89_mk | plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5 mm x 2.5 mm x 1.5 mm body | Marcom graphics | 2017-01-28 |
| SOT89 | plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5 mm x 2.5 mm x 1.5 mm body | Package information | 2024-11-12 |
| SOT89_115 | Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2025-01-16 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT89 | 3D model for products with SOT89 package | Design support | 2018-12-05 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PBSS305PX-Q | PBSS305PX-QX | 934667748115 | Active | SOT89_115 | 1,000 |
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樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.