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Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more information50 V, 3 A PNP low VCEsat transistor
PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4350D
Low collector-emitter saturation voltage VCEsat
High current capability
High efficiency due to less heat generation
Smaller Printed-Circuit Board (PCB) area than for conventional transistors
Supply line switching circuits
Battery management applications
DC-to-DC conversion
| 型號(hào) | Package version | Package name | Size (mm) | channel type (e) | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | TJ [max] (°C) | fT [min] (MHz) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS5350D | SOT457 | TSOP6 | 2.9 x 1.5 x 1 | PNP | 600.0 | -50.0 | -3000.0 | 200.0 | 150 | 100.0 | N |
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS5350D | PBSS5350D,115 (934055946115) |
Active | 53 |
TSOP6 (SOT457) |
SOT457 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT457_115 |
| PBSS5350D,125 (934055946125) |
Active | 53 | SOT457_125 | ||||
| PBSS5350D,135 (934055946135) |
Active | 53 | SOT457_135 |
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS5350D | PBSS5350D,115 | PBSS5350D |
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| PBSS5350D | PBSS5350D,125 | PBSS5350D |
|
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| PBSS5350D | PBSS5350D,135 | PBSS5350D |
|
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| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PBSS5350D | 50 V, 3 A PNP low VCEsat transistor | Data sheet | 2023-01-02 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT457 | 3D model for products with SOT457 package | Design support | 2022-11-04 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| TSOP6_SOT457_mk | plastic, surface-mounted package (TSOP6); 6 leads; 0.95 mm pitch; 2.9 mm x 1.5 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT457 | plastic, surface-mounted package (SC-74; TSOP6); 6 leads | Package information | 2023-03-03 |
| SOT457_115 | TSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
| SOT457_125 | TSOP6; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-04-21 |
| SOT457_135 | TSOP6; Reel pack for SMD, 11"; Q2/T3 product orientation | Packing information | 2020-06-12 |
| PBSS5350D_Nexperia_Product_Reliability | PBSS5350D Nexperia Product Reliability | Quality document | 2024-04-23 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PBSS5350D | PBSS5350D SPICE model | SPICE model | 2024-08-27 |
| PBSS5350D | Cad-Symbol of PBSS5350D | Software | 2008-11-20 |
| MAR_SOT457 | MAR_SOT457 Topmark | Top marking | 2013-06-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| PBSS5350D | PBSS5350D,115 | 934055946115 | Active | SOT457_115 | 3,000 |
|
| PBSS5350D | PBSS5350D,125 | 934055946125 | Active | SOT457_125 | 3,000 |
|
| PBSS5350D | PBSS5350D,135 | 934055946135 | Active | SOT457_135 | 10,000 |
|
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
