可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PESD4V0Y1BBSF | PESD4V0Y1BBSFYL | 934662472315 | SOD962-2 | 訂單產(chǎn)品 |
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Click here for more informationPESD4V0Y1BBSF
Extremely low clamping bidirectional ESD protection diode
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients.
Features and benefits
Bidirectional ESD protection of one line
VRWM = 4 V device
Very low diode capacitance Cd = 0.7 pF typical
Extremely low clamping and trigger voltage (6.7 V TLP) to protect sensitive I/Os
Extremely low inductance protection path to ground
ESD protection up to ±30 kV according to IEC 61000-4-2
IEC 61000-4-5 (surge): IPP = 25 A peak pulse (average measured)
Ultra small, very low inductance SMD package
Exceeds IEC 61000-4-4 level 4 for I/O data lines, meets IEC 61000-4-4 level 4 for power supply ports (corresponds to 80 A into a 50 Ohm termination)
Applications
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
USB3.2 and USB2.0 data lines, SD-card data lines
參數(shù)類型
| 型號 | Package name | Nr of lines | Configuration | VRWM (V) (V) | Cd [typ] (pF) | VESD IEC61000-4-2 (kV) |
|---|---|---|---|---|---|---|
| PESD4V0Y1BBSF | DSN0603-2 | 1 | Bidirectional | 4 | 0.7 | 30 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PESD4V0Y1BBSF | PESD4V0Y1BBSFYL (934662472315) |
Active | 6C |
DSN0603-2 (SOD962-2) |
SOD962-2 | SOD962-2_315 |
文檔 (11)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PESD4V0Y1BBSF_SDS | Extremely low clamping bidirectional ESD protection diode | Short data sheet | 2022-08-23 |
| AN11046 | Recommendations for PCB assembly of DSN0603-2 | Application note | 2021-04-12 |
| AN90038 | ESD protection for high-speed interfaces without latch-up | Application note | 2023-07-11 |
| AN11046 | Recommendations for PCB assembly of DSN0603-2 | Application note | 2021-04-12 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| Nexperia_document_brochure_ESD-Protection-Applications_022017 | ESD Protection Application guide | Brochure | 2018-12-21 |
| SOD962-2 | 3D model for products with SOD962-2 package | Design support | 2023-02-02 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DSN0603-2_SOD962-2_mk | silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch; 0.6 mm x 0.3 mm x 0.3 mm body | Marcom graphics | 2017-01-28 |
| SOD962-2 | silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch; 0.6 mm x 0.3 mm x 0.3 mm body | Package information | 2021-01-06 |
| SOD962-2_315 | DSN0603-2 ; Reel pack for SMD, 7"; Q1/T1-Q2/T3 product orientation | Packing information | 2020-04-21 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| SOD962-2 | 3D model for products with SOD962-2 package | Design support | 2023-02-02 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PESD4V0Y1BBSF | PESD4V0Y1BBSFYL | 934662472315 | Active | SOD962-2_315 | 9,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.