可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PESD5V0X1BCL-Q | PESD5V0X1BCL-QYL | 934665476315 | SOD882 | 訂單產(chǎn)品 |
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Click here for more informationPESD5V0X1BCL-Q
Extremely low capacitance bidirectional ESD protection diode
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 (DFN1006-2) Surface-Mounted Device (SMD) plastic package, designed to protect one signal line from the damage caused by ESD and other transients. The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection.
Features and benefits
Bidirectional ESD protection of one line
Extremely low capacitance: Cd = 0.49 pF
Low clamping voltage: VCL = 18 V
Ultra low leakage current: IRM = 1 nA
ESD protection up to 8 kV
IEC 61000-4-2; level 4 (ESD)
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
10/100/1000 Mbit/s Ethernet
USB, High-Definition Multimedia Interface (HDMI), FireWire
Portable electronics
SIM card protection
High-speed data lines
Communication systems
參數(shù)類型
| 型號 | Package name | Nr of lines | Configuration | VRWM (V) (V) | Cd [typ] (pF) | VESD IEC61000-4-2 (kV) |
|---|---|---|---|---|---|---|
| PESD5V0X1BCL-Q | DFN1006-2 | 1 | Bidirectional | 5.5 | 0.49 | 8 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PESD5V0X1BCL-Q | PESD5V0X1BCL-QYL (934665476315) |
Active | 11 |
DFN1006-2 (SOD882) |
SOD882 |
REFLOW_BG-BD-1
|
SOD882_315 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PESD5V0X1BCL-Q | PESD5V0X1BCL-QYL | PESD5V0X1BCL-Q |
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文檔 (10)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PESD5V0X1BCL-Q | Extremely low capacitance bidirectional ESD protection diode | Data sheet | 2023-04-24 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| Nexperia_document_brochure_ESD-Protection-Applications_022017 | ESD Protection Application guide | Brochure | 2018-12-21 |
| SOD882 | 3D model for products with SOD882 package | Design support | 2019-10-07 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN1006-2_SOD882_mk | plastic, leadless ultra small package; 2 terminals; 0,65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | Marcom graphics | 2017-01-28 |
| SOD882 | plastic, leadless ultra small package; 2 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | Package information | 2022-05-20 |
| SOD882_315 | DFN1006-2; Reel pack for SMD, 7"; Q1/T1-Q2/T3 product orientation | Packing information | 2021-01-27 |
| PESD5V0X1BCL-Q_Nexperia_Product_Reliability | PESD5V0X1BCL-Q Nexperia Product Reliability | Quality document | 2024-04-29 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOD882 | 3D model for products with SOD882 package | Design support | 2019-10-07 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PESD5V0X1BCL-Q | PESD5V0X1BCL-QYL | 934665476315 | Active | SOD882_315 | 10,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.