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30 V dual N-channel Trench MOSFET
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
- Very fast switching
- Trench MOSFET technology
- Leadless medium power SMD plastic package: 2 × 2 × 0.6 mm
- Exposed drain pad for excellent thermal conduction
- ESD protection up to 1.8 kV
Applications
- Charging switch for portable devices
- DC-to-DC converters
- Small brushless DC motor drive
- Power management in battery-driven portables
- Hard disk and computing power management
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMDPB95XNE | SOT1118 | DFN2020-6 | End of life | N | 2 | 30 | 12 | 120 | 165 | 150 | 3.1 | 0.45 | 1.65 | 0.475 | 1 | N | 143 | 43 | 2012-09-27 |
封裝
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMDPB95XNE | PMDPB95XNE,115 (934067055115) |
Obsolete |
DFN2020-6 (SOT1118) |
SOT1118 |
REFLOW_BG-BD-1
|
SOT1118_115 |
環(huán)境信息
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PMDPB95XNE | PMDPB95XNE,115 | PMDPB95XNE |
|
|
文檔 (16)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMDPB95XNE | 30 V dual N-channel Trench MOSFET | Data sheet | 2012-09-26 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-03-20 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| SOT1118 | 3D model for products with SOT1118 package | Design support | 2019-10-07 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN2020-6_SOT1118_mk | plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
| SOT1118 | plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-06-02 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PMDPB95XNE_11_9_21 | PMDPB95XNE Spice model | SPICE model | 2013-12-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMDPB95XNE_11_9_21 | PMDPB95XNE Spice model | SPICE model | 2013-12-13 |
| SOT1118 | 3D model for products with SOT1118 package | Design support | 2019-10-07 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.