可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PMN30ENEA | PMN30ENEAX | 934660863115 | SOT457 | 訂單產(chǎn)品 |
| PMN30ENEA | PMN30ENEAH | 934660863125 | SOT457 | 訂單產(chǎn)品 |
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40 V N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Logic-level compatible
Extended temperature range Tj = 175 °C
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)
AEC-Q101 qualified
Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMN30ENEA | SOT457 | TSOP6 | Production | N | 1 | 40 | 30 | 40 | 175 | 5.4 | 1.6 | 7.8 | 1.7 | 4 | 1.6 | Y | 440 | 76 | 2019-04-02 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMN30ENEA | PMN30ENEAX (934660863115) |
Active | 3Q |
TSOP6 (SOT457) |
SOT457 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT457_115 |
| PMN30ENEAH (934660863125) |
Active | 3Q | SOT457_125 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PMN30ENEA | PMN30ENEAX | PMN30ENEA |
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| PMN30ENEA | PMN30ENEAH | PMN30ENEA |
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文檔 (13)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMN30ENEA | 40 V N-channel Trench MOSFET | Data sheet | 2019-04-02 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT457 | 3D model for products with SOT457 package | Design support | 2022-11-04 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| TSOP6_SOT457_mk | plastic, surface-mounted package (TSOP6); 6 leads; 0.95 mm pitch; 2.9 mm x 1.5 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT457 | plastic, surface-mounted package (SC-74; TSOP6); 6 leads | Package information | 2023-03-03 |
| SOT457_115 | TSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
| SOT457_125 | TSOP6; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-04-21 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PMN30ENEA | PMN30ENEA Spice model | SPICE model | 2019-05-08 |
| MAR_SOT457 | MAR_SOT457 Topmark | Top marking | 2013-06-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PMN30ENEA | PMN30ENEAX | 934660863115 | Active | SOT457_115 | 3,000 |
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| PMN30ENEA | PMN30ENEAH | 934660863125 | Active | SOT457_125 | 3,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.