可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PSMN013-40VLD | PSMN013-40VLDX | 934662825115 | SOT1205 | 訂單產(chǎn)品 |
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Click here for more informationPSMN013-40VLD
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using NextpowerS3 technology. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance PWM and space constrained motor drive applications |  |
Features and benefits
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LFPAK56D package with half-bridge configuration enables:
Reduced PCB layout complexity
Module shrinkage through reduced component count
Improved system level Rth(j-amb) due to optimized package design
Lower parasitic inductance to support higher efficiency
Footprint compatibility with LFPAK56D Dual package
NextpowerS3 technology
Low power losses, high power density
Superior avalanche performance
Repetitive avalanche rated
LFPAK copper clip packaging provides high robustness and reliability
Gull wing leads support high manufacturability and Automated Optical Inspection (AOI)
Applications
Handheld power tools, portable appliance and space constrained applications
Brushless or brushed DC motor drive
DC-to-DC systems
LED lighting
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN013-40VLD | SOT1205 | LFPAK56D; Dual LFPAK | Production | N | 2 | 40 | 13.6 | 16.9 | 175 | 42 | 2.1 | 13.9 | 46 | 16.2 | 1.85 | N | 829 | 280 | 2021-01-08 |
封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSMN013-40VLD | PSMN013-40VLDX (934662825115) |
Active | 13DL40V |
LFPAK56D; Dual LFPAK (SOT1205) |
SOT1205 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT1205_115 |
環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSMN013-40VLD | PSMN013-40VLDX | PSMN013-40VLD |
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Series
文檔 (20)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSMN013-40VLD | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) | Data sheet | 2023-12-14 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN90003 | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
| AN90011 | Half-bridge MOSFET switching and its impact on EMC | Application note | 2025-02-10 |
| SOT1205 | 3D model for products with SOT1205 package | Design support | 2017-06-30 |
| SOT1205 | 3D model for products with SOT1205 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK56D_SOT1205_mk | plastic, single ended surface mounted package (LFPAK56D); 8 leads; 1.27 mm pitch; 4.7 mm x 5.3 mm x 1.05 mm body | Marcom graphics | 2017-01-28 |
| SOT1205 | plastic, single ended surface mounted package (LFPAK56D); 8 leads | Package information | 2022-03-11 |
| SOT1205_115 | LFPAK56D; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2021-01-11 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PSMN013-40VLD | PSMN013-40VLD SPICE model | SPICE model | 2021-06-01 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| CauerModel_PSMN013-40VLD | CauerModel PSMN013-40VLD | Thermal model | 2021-06-01 |
| FosterModel_PSMN013-40VLD | FosterModel PSMN013-40VLD | Thermal model | 2021-06-01 |
| PSMN013-40VLD | PSMN013-40VLD FloTherm thermal model | Thermal model | 2021-06-16 |
| PSMN013-40VLD_Cauer | PSMN013-40VLD Cauer thermal model | Thermal model | 2021-06-01 |
| PSMN013-40VLD_Foster | PSMN013-40VLD Foster thermal model | Thermal model | 2021-06-01 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT1205 | 3D model for products with SOT1205 package | Design support | 2017-06-30 |
| PSMN013-40VLD | PSMN013-40VLD SPICE model | SPICE model | 2021-06-01 |
| CauerModel_PSMN013-40VLD | CauerModel PSMN013-40VLD | Thermal model | 2021-06-01 |
| FosterModel_PSMN013-40VLD | FosterModel PSMN013-40VLD | Thermal model | 2021-06-01 |
| PSMN013-40VLD | PSMN013-40VLD FloTherm thermal model | Thermal model | 2021-06-16 |
| PSMN013-40VLD_Cauer | PSMN013-40VLD Cauer thermal model | Thermal model | 2021-06-01 |
| PSMN013-40VLD_Foster | PSMN013-40VLD Foster thermal model | Thermal model | 2021-06-01 |
| SOT1205 | 3D model for products with SOT1205 package | Design support | 2017-06-30 |
訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PSMN013-40VLD | PSMN013-40VLDX | 934662825115 | Active | SOT1205_115 | 1,500 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.