可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PXN011-100QS | PXN011-100QSJ | 934665768118 | SOT8002-1 | 訂單產(chǎn)品 |
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Click here for more informationPXN011-100QS
N-channel 100 V, 11 mOhm, standard level Trench MOSFET in MLPAK33
General purpose MOSFET for standard applications, 56 A, standard level N-channel enhancement mode Power MOSFET in MLPAK33 package.
Features and benefits
Standard level compatibility
Trench MOSFET technology
Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)
Applications
Secondary side synchronous rectification
DC-to-DC converters
Home appliance
Motor drive
Load switching
LED lighting
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PXN011-100QS | SOT8002-1 | MLPAK33 | Production | N | 1 | 100 | 11 | 150 | 56 | 5.7 | 25 | 66 | 28 | 3 | N | 1599 | 585 | 2023-08-07 |
封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PXN011-100QS | PXN011-100QSJ (934665768118) |
Active | 9AP |
MLPAK33 (SOT8002-1) |
SOT8002-1 | SOT8002-1_118 |
環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PXN011-100QS | PXN011-100QSJ | PXN011-100QS |
|
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Series
文檔 (30)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PXN011-100QS | N-channel 100 V, 11 mOhm, standard level Trench MOSFET in MLPAK33 | Data sheet | 2023-09-21 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10441 | Level shifting techniques in I2C-bus design | Application note | 2020-02-11 |
| AN11119 | Medium power small-signal MOSFETs in DC-to-DC conversion | Application note | 2013-05-07 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-02-18 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-03-20 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN50005 | Paralleling power MOSFETs in high power applications | Application note | 2021-09-13 |
| AN50006 | Power MOSFETs in linear mode | Application note | 2022-04-12 |
| AN50014 | Understanding the MOSFET peak drain current rating | Application note | 2022-03-28 |
| AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |
| AN90011 | Half-bridge MOSFET switching and its impact on EMC | Application note | 2025-02-10 |
| AN90017 | Load switches for mobile and computing applications | Application note | 2020-09-02 |
| AN90032 | Low temperature soldering, application study | Application note | 2022-02-22 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-04-22 |
| SOT8002_1 | 3D model for products with SOT8002-1 package | Design support | 2021-04-30 |
| SOT8002-1 | 3D model for products with SOT8002-1 package | Design support | 2021-01-28 |
| SOT8002-1 | plastic thermal enhanced surface mounted package; mini leads; 8 terminals;pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body | Package information | 2023-05-22 |
| SOT8002-1_118 | MLPAK33; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2021-02-05 |
| UNT_SGT_G1_SOT8002-1_PXN011-100QS_Nexperia_Quality_Reliability_document | PXN011-100QS Quality document | Quality document | 2024-09-11 |
| PXN011-100QS | PXN011-100QS SPICE model | SPICE model | 2023-10-23 |
| CauerModel_PXN011-100QS | Cauer model PXN011-100QS | Thermal model | 2023-10-23 |
| FosterModel_PXN011-100QS | Foster model PXN011-100QS | Thermal model | 2023-10-23 |
| PXN011-100QS | PXN011-100QS RCth model | Thermal model | 2023-10-23 |
| PXN011-100QS_Cauer | PXN011-100QS Cauer model | Thermal model | 2023-10-23 |
| PXN011-100QS_Foster | PXN011-100QS Foster model | Thermal model | 2023-10-23 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT8002_1 | 3D model for products with SOT8002-1 package | Design support | 2021-04-30 |
| PXN011-100QS | PXN011-100QS SPICE model | SPICE model | 2023-10-23 |
| CauerModel_PXN011-100QS | Cauer model PXN011-100QS | Thermal model | 2023-10-23 |
| FosterModel_PXN011-100QS | Foster model PXN011-100QS | Thermal model | 2023-10-23 |
| PXN011-100QS | PXN011-100QS RCth model | Thermal model | 2023-10-23 |
| PXN011-100QS_Cauer | PXN011-100QS Cauer model | Thermal model | 2023-10-23 |
| PXN011-100QS_Foster | PXN011-100QS Foster model | Thermal model | 2023-10-23 |
| SOT8002-1 | 3D model for products with SOT8002-1 package | Design support | 2021-01-28 |
訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PXN011-100QS | PXN011-100QSJ | 934665768118 | Active | SOT8002-1_118 | 3,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.