可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PXN8R3-30QL | PXN8R3-30QLJ | 934661598118 | SOT8002-1 | 訂單產(chǎn)品 |
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Click here for more informationPXN8R3-30QL
30 V, N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Logic-level compatible
Trench MOSFET technology
Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery
Low spiking and ringing for low EMI designs
MLPAK33 package (3.3 x 3.3 mm footprint)
Applications
DC to DC conversion
Battery management
Low-side load switch
Switching circuits
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PXN8R3-30QL | SOT8002-1 | MLPAK33 | Production | N | 1 | 30 | 8.3 | 11.1 | 150 | 31 | 1.3 | 5.1 | 10.6 | 4.3 | 6 | 1.7 | N | 760 | 270 | 2020-11-02 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PXN8R3-30QL | PXN8R3-30QLJ (934661598118) |
Active | 9AD |
MLPAK33 (SOT8002-1) |
SOT8002-1 | SOT8002-1_118 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PXN8R3-30QL | PXN8R3-30QLJ | PXN8R3-30QL |
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Series
文檔 (9)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PXN8R3-30QL | 30 V, N-channel Trench MOSFET | Data sheet | 2023-07-31 |
| AN11119 | Medium power small-signal MOSFETs in DC-to-DC conversion | Application note | 2013-05-07 |
| AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
| AN90017 | Load switches for mobile and computing applications | Application note | 2020-09-02 |
| SOT8002_1 | 3D model for products with SOT8002-1 package | Design support | 2021-04-30 |
| SOT8002-1 | 3D model for products with SOT8002-1 package | Design support | 2021-01-28 |
| SOT8002-1 | plastic thermal enhanced surface mounted package; mini leads; 8 terminals;pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body | Package information | 2023-05-22 |
| SOT8002-1_118 | MLPAK33; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2021-02-05 |
| PXN8R3-30QL | PXN8R3-30QL SPICE model | SPICE model | 2021-01-22 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT8002_1 | 3D model for products with SOT8002-1 package | Design support | 2021-04-30 |
| PXN8R3-30QL | PXN8R3-30QL SPICE model | SPICE model | 2021-01-22 |
| SOT8002-1 | 3D model for products with SOT8002-1 package | Design support | 2021-01-28 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PXN8R3-30QL | PXN8R3-30QLJ | 934661598118 | Active | SOT8002-1_118 | 3,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.