可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| 74HCT14BQ | 74HCT14BQ,115 | 935273541115 | SOT762-1 | 訂單產(chǎn)品 |
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Click here for more information74HCT14BQ
Hex inverting Schmitt trigger
The 74HC14; 74HCT14 is a hex inverter with Schmitt-trigger inputs. This device features reduced input threshold levels to allow interfacing to TTL logic levels. Inputs also include clamp diodes, this enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. Schmitt trigger inputs transform slowly changing input signals into sharply defined jitter-free output signals.
Alternatives
Features and benefits
Wide supply voltage range from 2.0 to 6.0 V
CMOS low power dissipation
High noise immunity
Unlimited input rise and fall times
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Complies with JEDEC standards:
JESD8C (2.7 V to 3.6 V)
JESD7A (2.0 V to 6.0 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Applications
Wave and pulse shapers
Astable multivibrators
Monostable multivibrators
參數(shù)類型
| 型號 | VCC (V) | Logic switching levels | Output drive capability (mA) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|
| 74HCT14BQ | 4.5?-?5.5 | TTL | ± 4 | 36 | 6 | low | -40~125 | 106 | 73 | DHVQFN14 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74HCT14BQ | 74HCT14BQ,115 (935273541115) |
Active | HCT14 |
DHVQFN14 (SOT762-1) |
SOT762-1 | SOT762-1_115 |
Series
文檔 (12)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74HC_HCT14 | Hex inverting Schmitt trigger | Data sheet | 2024-02-29 |
| AN11044 | Pin FMEA 74HC/74HCT family | Application note | 2019-01-09 |
| SOT762-1 | 3D model for products with SOT762-1 package | Design support | 2019-10-03 |
| 74hct14bq | 74hct14bq IBIS model | IBIS model | 2013-04-08 |
| hct14 | 74HCT14 IBIS Model | IBIS model | 2023-01-20 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DHVQFN14_SOT762-1_mk | plastic, dual in-line compatible thermal enhanced very thin quad flat package; no leads; 14 terminals; 0.5 mm pitch; 2.5 mm x 3 mm x 0.85 mm body | Marcom graphics | 2017-01-28 |
| SOT762-1 | plastic, leadless dual in-line compatible thermal enhanced very thin quad flat package; 14 terminals; 0.5 mm pitch; 2.5 x 3 x 1 mm body | Package information | 2023-04-05 |
| SOT762-1_115 | DHVQFN14; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2020-04-21 |
| 74HCT14BQ_Nexperia_Product_Reliability | 74HCT14BQ Nexperia Product Reliability | Quality document | 2025-03-20 |
| hc | HC/HCT Spice model | SPICE model | 2022-02-17 |
| HCT_USER_GUIDE | HC/T User Guide | User manual | 1997-10-31 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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訂購、定價(jià)與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| 74HCT14BQ | 74HCT14BQ,115 | 935273541115 | Active | SOT762-1_115 | 3,000 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.