可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| PNE20080CPE-Q | PNE20080CPE-QZ | 934663028139 | SOT1289B | 訂單產(chǎn)品 |
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Click here for more informationPNE20080CPE-Q
200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier
High power density, hyperfast switching time dual recovery rectifier in common cathode configuration with high-efficiency planar technology, encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package.
Features and benefits
Reverse voltage: VR ≤ 200 V
Forward current: IF ≤ 4 A (per diode)
Switching time: trr ≤ 30 ns
Pt doped life time control
Low inductance
Power and flat lead SMD plastic package
Package height typical 0.95 mm
High power capability due to clip-bond technology
Planar die design
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
General-purpose rectification
Hyperfast switching
Solenoid control
Piezo injection
Freewheeling applications
參數(shù)類(lèi)型
| 型號(hào) | Package version | Package name | Size (mm) | VR [max] (V) | IF(AV) per diode; [max] (A) | IFSM [max] (A) | VF [max] (mV) | IR [max] (μA) | Configuration | trr [max] (ns) | IF [max] (mA) | Cd [typ] (pF) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PNE20080CPE-Q | SOT1289B | CFP15B | 5.8 x 4.3 x 0.95 | 200.0 | 4.0 | 170.0 | 930.0 | 1.0 | common cathode | 30.0 | 5600.0 | 60.0 | Y |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PNE20080CPE-Q | PNE20080CPE-QZ (934663028139) |
Active | 200E 008C |
CFP15B (SOT1289B) |
SOT1289B |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT1289B_139 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PNE20080CPE-Q | PNE20080CPE-QZ | PNE20080CPE-Q |
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Series
文檔 (9)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PNE20080CPE-Q | 200 V, 2 x 4 A dual common cathode hyperfast recovery rectifier | Data sheet | 2024-07-15 |
| SOT1289B | 3D model for products with SOT1289B package | Design support | 2020-01-22 |
| RS2624_CFP15BSide | RS2624_CFP15BSide | Marcom graphics | 2021-03-11 |
| SOT1289B | plastic, thermal enhanced ultra thin SMD package; 3leads; 2.13?mm pitch; 5.8 x 4.3 x 0.95 mm body | Package information | 2023-06-02 |
| SOT1289B_139 | CFP15B; Reel pack for SMD, 13"; Q4/T2 product orientation | Packing information | 2020-09-02 |
| PNE20080CPE-Q_Nexperia_Product_Reliability | PNE20080CPE-Q Nexperia Product Reliability | Quality document | 2024-04-23 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| TN90007 | Evaluation of junction temperature and thermal stacks using the virtual junction | Technical note | 2024-09-02 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| SOT1289B | 3D model for products with SOT1289B package | Design support | 2020-01-22 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| PNE20080CPE-Q | PNE20080CPE-QZ | 934663028139 | Active | SOT1289B_139 | 5,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.