可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| 74CBTLV3306GT | 74CBTLV3306GTX | 935308825115 | SOT833-1 | 訂單產品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more information74CBTLV3306GT
2-bit bus switch
The 74CBTLV3306 is a 2-bit high-speed bus switch with separate output enable inputs (nOE). Each switch is disabled when the associated output enable (nOE) input is HIGH.
To ensure the high-impedance OFF-state during power-up or power-down, nOE should be tied to the VCC through a pull-up resistor. The minimum value of the resistor is determined by the current?-?sinking capability of the driver.
Schmitt trigger action at control input makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 2.3 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.
Features and benefits
Supply voltage range from 2.3 V to 3.6 V
High noise immunity
4 Ω switch connection between two ports
Rail to rail switching on data I/O ports
CMOS low power consumption
IOFF circuitry provides partial Power-down mode operation
Latch-up performance exceeds 250 mA per JESD78B Class I level A
Complies with JEDEC standard:
JESD8-5 (2.3 V to 2.7 V)
JESD8-B/JESD36 (2.7 V to 3.6 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C and -40 °C to +125 °C
參數類型
| 型號 | VCC (V) | VPASS (V) | Logic switching levels | RON (Ω) | f(-3dB) (MHz) | Nr of bits | tpd (ns) | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 74CBTLV3306GT | 2.3?-?3.6 | 5 | CMOS/LVTTL | 7 | 400 | 2 | 0.2 | very low | -40~125 | 323 | 5.9 | 154.7 | XSON8 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
|
|
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74CBTLV3306GT | 74CBTLV3306GTX (935308825115) |
Active | b6 |
XSON8 (SOT833-1) |
SOT833-1 | SOT833-1_115 |
Series
文檔 (9)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| 74CBTLV3306 | 2-bit bus switch | Data sheet | 2024-06-24 |
| Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
| SOT833-1 | 3D model for products with SOT833-1 package | Design support | 2021-01-28 |
| cbtlv3306 | cbtlv3306 IBIS model | IBIS model | 2017-03-24 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT833-1 | plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 1 mm x 1.95 mm x 0.5 mm body | Package information | 2022-06-03 |
| SOT833-1_115 | XSON8; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2020-04-21 |
| 74CBTLV3306GT_Nexperia_Product_Reliability | 74CBTLV3306GT Nexperia Product Reliability | Quality document | 2025-03-20 |
| MAR_SOT833 | MAR_SOT833 Topmark | Top marking | 2013-06-03 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
|
|
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| 74CBTLV3306GT | 74CBTLV3306GTX | 935308825115 | Active | SOT833-1_115 | 5,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.