Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more information74AUP1G0832GF
Low-power 3-input AND-OR gate
The 74AUP1G0832 is a single 3-input AND-OR gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
Alternatives
Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
CMOS low power dissipation
High noise immunity
Overvoltage tolerant inputs to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Low static power consumption; ICC = 0.9 μA (maximum)
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
參數(shù)類型
| 型號(hào) | Package name |
|---|---|
| 74AUP1G0832GF | XSON6 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
|
|
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74AUP1G0832GF | 74AUP1G0832GF,132 (935281326132) |
Obsolete |
XSON6 (SOT891) |
SOT891 |
REFLOW_BG-BD-1
|
SOT891_132 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74AUP1G0832GF | 74AUP1G0832GF,132 | 74AUP1G0832GF |
|
|
Series
文檔 (14)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74AUP1G0832 | Low-power 3-input AND-OR gate | Data sheet | 2023-07-13 |
| AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
| AN11052 | Pin FMEA for AUP family | Application note | 2019-01-09 |
| Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
| SOT891 | 3D model for products with SOT891 package | Design support | 2019-10-03 |
| aup1g08 | 74AUP1G08 IBIS model | IBIS model | 2014-12-14 |
| aup1g0832 | aup1g0832 IBIS model | IBIS model | 2014-12-21 |
| Nexperia_document_Logic_CombinationLogic_infocard_201710 | Combination logic solutions card | Leaflet | 2019-08-09 |
| Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN1010-6_SOT891_mk | plastic, extremely thin small outline package; 6 terminals; 0.55 mm pitch; 1 mm x 1 mm x 0.5 mm body | Marcom graphics | 2017-01-28 |
| SOT891 | plastic, leadless extremely thin small outline package; 6 terminals; 0.35 mm pitch; 1 mm x 1 mm x 0.5 mm body | Package information | 2020-04-21 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| MAR_SOT891 | MAR_SOT891 Topmark | Top marking | 2013-06-03 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
|
|
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.