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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74AXP1G97GX

Low-power configurable multiple function gate

The 74AXP1G97 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions MUX, AND, OR, NAND, NOR, inverter and buffer. All inputs can be connected directly to VCC or GND.

This device ensures very low static and dynamic power consumption across the entire VCC range from 0.7 V to 2.75 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 0.7 V to 2.75 V

  • Low input capacitance; CI = 0.5 pF (typical)

  • Low output capacitance; CO = 1.0 pF (typical)

  • Low dynamic power consumption; CPD = 2.6 pF at VCC = 1.2 V (typical)

  • Low static power consumption; ICC = 0.6 μA (85 °C maximum)

  • High noise immunity

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 2.75 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial power-down mode operation

  • Complies with JEDEC standard:

    • JESD8-12A.01 (1.1 V to 1.3 V)

    • JESD8-11A.01 (1.4 V to 1.6 V)

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A.01 (2.3 V to 2.7 V)

  • ESD protection:

    • HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2000 V

    • CDM JESD22-C101E exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C

參數(shù)類型

型號(hào) VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Package name
74AXP1G97GX 0.7?-?2.75 CMOS ± 4.5 4.5 70 1 ultra low -40~85 X2SON6

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào),(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74AXP1G97GX 74AXP1G97GXZ
(935307131147)
Withdrawn / End-of-life SOT1255-2
X2SON6
(SOT1255-2)
SOT1255-2 SOT1255-2_147
74AXP1G97GXH
(935307131125)
Obsolete 暫無信息

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74AXP1G97GX 74AXP1G97GXZ 74AXP1G97GX rohs rhf rhf
74AXP1G97GX 74AXP1G97GXH 74AXP1G97GX rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (7)

文件名稱 標(biāo)題 類型 日期
74AXP1G97 Low-power configurable multiple function gate Data sheet 2022-02-17
SOT1255-2 3D model for products with SOT1255-2 package Design support 2021-01-28
axp1g97 74AXP1G97 IBIS model IBIS model 2015-09-08
Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 AXP – Extremely low-power logic technology portfolio Leaflet 2019-04-05
Nexperia_document_leaflet_Logic_X2SON_packages_062018 X2SON ultra-small 4, 5, 6 & 8-pin leadless packages Leaflet 2018-06-05
SOT1255-2 plastic thermal enhanced extremely thin small outline package; no leads;6 terminals; body 1.0 x 0.8 x 0.32 mm Package information 2020-08-27
74AXP1G97GX_Nexperia_Product_Reliability 74AXP1G97GX Nexperia Product Reliability Quality document 2025-03-20

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標(biāo)題 類型 日期
axp1g97 74AXP1G97 IBIS model IBIS model 2015-09-08
SOT1255-2 3D model for products with SOT1255-2 package Design support 2021-01-28

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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