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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

NPS1000UP

0.5 V to 1.0 V, 1.5 A peak, 11 mΩ, load switch

NPS1000 is a low voltage, single-channel load switch with a low RDS,ON (11 mΩ) to minimize IR drop and power loss. It supports up to 0.6 A RMS current and a peak current of 1.5 A.

The switch is controlled by an EN input which is compatible with 1.2 V logic levels. When the load switch is enabled, the internal switch charges the output capacitor with a controlled inrush current. When the switch is disabled, an 8 Ω on-chip resistor discharges the output to ground and keeps it from floating.

The IC is powered from a separate BIAS pin which is rated for 2.3 V to 5.0 V operation.

NPS1000 has an over-temperature protection that latches the device OFF when the internal junction temperature is above the set point (Tth(OTLO)). At this time, the internal switch is turned off and the output discharge element turns on to discharge the output capacitor. The load switch can be enabled again by toggling the EN pin.

NPS1000 is available in an ultra-small, space saving, wafer level chip-scale package; 8 bumps; 1.42 mm × 0.72 mm × 0.465 mm body and is characterized for operation over junction temperature range of –?40 °C to 105 °C.

Features and benefits

  • 0.5 V – 1.0 V operation voltage
  • Low RDS,ON: 11 mΩ typical at 25 °C, 16 mΩ (maximum) at 85 °C
  • Enable logic supports 1.2 V logic levels
  • 0.6 A RMS and 1.5 A peak current capability
  • Controlled start-up
    • <200 μs from enable to full enhancement of power FET
  • Output short tolerant
    • When supplied by a 4.5 A current limited power supply
  • Over-temperature shutdown and input UVLO protection
  • 8 Ω discharge while disabled
  • Small package footprint
  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C2a exceeds 500 V

  • Specified from TJ = -40 °C to +105 °C

Applications

  • Mobile phones

  • Wearables

Boards

Part number Description Type Quick links Shop link
描述
The NEVB-NPS1000 is a two-layer PCB containing the NPS1000 load switch device. The VIN and VOUT connections to the device and the PCB layout routing provides a low-resistance pathway into and out of the device under test. Test point connections allow the EVB user to control the device with userdefined test conditions a nd make accurate device measurements.
類型
Evaluation board
Quick links
Shop link

Series

文檔 (6)

文件名稱 標題 類型 日期
NPS1000 0.5 V to 1.0 V, 1.5 A peak, 11 mΩ, load switch Data sheet 2024-03-29
AN90052 Nexperia load switch ICs compared to discrete solutions Application note 2024-04-09
nexperia_leaflet_electronics_power_management_load_switch NPS4053 load switch leaflet Leaflet 2024-03-29
nexperia_leaflet_electronics_power_management_load_switch_CN 改善功耗和系統(tǒng)保護 電源管理負載芯片 Leaflet 2025-01-06
WLCSP8_SOT8068 wafer level chip-scale package; 8 bumps; 1.42 × 0.72 × 0.465 mm body Package information 2024-01-25
UM90027 NEVB-NPS1000 load switch evaluation board User manual 2024-06-24

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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