可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| PBSS5350TH | PBSS5350THR | 934071078215 | SOT23 | 訂單產(chǎn)品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationPBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
Higher efficiency leading to less heat genereation
High temperature applications up to 175 °C
AEC-Q101 qualified
Applications
Power management
DC-to-DC conversion
Supply line switches
Battery charger switches
Peripheral drivers
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver
參數(shù)類(lèi)型
| 型號(hào) | Package version | Package name | Size (mm) | channel type (e) | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | ICM [max] (A) | hFE [min] | fT [min] (MHz) | RCEsat@IC [max] (mΩ) | VCEsat [max] (mV) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS5350TH | SOT23 | SOT23 | 2.9 x 1.3 x 1 | PNP | 1440.0 | -50.0 | -2.0 | -5.0 | 200.0 | 100.0 | 135.0 | -390.0 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS5350TH | PBSS5350THR (934071078215) |
Active | FJ% |
(SOT23) |
SOT23 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT23_215 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS5350TH | PBSS5350THR | PBSS5350TH |
|
|
文檔 (11)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PBSS5350TH | 50 V, 3 A PNP low VCEsat (BISS) transistor | Data sheet | 2017-06-21 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT23_mk | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT23 | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Package information | 2022-10-12 |
| SOT23_215 | Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2025-01-20 |
| PBSS5350TH_Nexperia_Product_Reliability | PBSS5350TH Nexperia Product Reliability | Quality document | 2024-04-23 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PBSS5350TH | PBSS5350TH SPICE model | SPICE model | 2024-08-27 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PBSS5350TH | PBSS5350TH SPICE model | SPICE model | 2024-08-27 |
| SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| PBSS5350TH | PBSS5350THR | 934071078215 | Active | SOT23_215 | 3,000 |
|
樣品
作為 Nexperia 的客戶(hù)，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶(hù)，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.