可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PMV55ENEA | PMV55ENEAR | 934068714215 | SOT23 | 訂單產(chǎn)品 |
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Click here for more informationPMV55ENEA
60 V, N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
不建議用在新設(shè)計(jì)中(NRND)。
Features and benefits
Logic-level compatible
Extended temperature range Tj = 175 °C
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)
AEC-Q101 qualified
Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PMV55ENEA
|
SOT23 | SOT23 | Not for design in | N | 1 | 60 | 60 | 70 | 175 | 3.3 | 1.8 | 8.8 | 1.4 | 6 | 1.7 | Y | 450 | 49 | 2016-03-02 |
封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
|
PMV55ENEA
|
PMV55ENEAR (934068714215) |
Active | DL% |
(SOT23) |
SOT23 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT23_215 |
環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
|
PMV55ENEA
|
PMV55ENEAR | PMV55ENEA |
|
|
文檔 (16)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMV55ENEA | 60 V, N-channel Trench MOSFET | Data sheet | 2017-03-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT23_mk | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT23 | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Package information | 2022-10-12 |
| SOT23_215 | Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2025-01-20 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PMV55ENE | PMV55ENE Spice model | SPICE model | 2018-07-06 |
| PMV55ENEA | PMV55ENEA SPICE model | SPICE model | 2016-05-03 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PMV55ENEA | PMV55ENEAR | 934068714215 | Active | SOT23_215 | 3,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.