可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PBSS4021NX | PBSS4021NX,115 | 934063402115 | SOT89 | 訂單產(chǎn)品 |
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Click here for more informationPBSS4021NX
20 V, 7 A NPN low VCEsat transistor
NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4021PX
Alternatives
Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
參數(shù)類型
| 型號 | Package version | Package name | Size (mm) | channel type (e) | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | TJ [max] (°C) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|
| PBSS4021NX | SOT89 | SOT89 | 4.5 x 2.5 x 1.5 | NPN | 600 | 20 | 7000 | 300 | 150 | Y |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS4021NX | PBSS4021NX,115 (934063402115) |
Active | %6D |
(SOT89) |
SOT89 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT89_115 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS4021NX | PBSS4021NX,115 | PBSS4021NX |
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文檔 (15)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSS4021NX | 20 V, 7 A NPN low VCEsat transistor | Data sheet | 2025-01-16 |
| AN10909 | Low VCEsat transistors in medium power loadswitch applications | Application note | 2013-03-14 |
| AN11045 | Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors | Application note | 2013-03-04 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| PBSS4041NX | 60 V, 6.2 A NPN low VCEsat transistor | Data sheet | 2025-01-16 |
| SOT89 | 3D model for products with SOT89 package | Design support | 2018-12-05 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT89_mk | plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5 mm x 2.5 mm x 1.5 mm body | Marcom graphics | 2017-01-28 |
| SOT89 | plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5 mm x 2.5 mm x 1.5 mm body | Package information | 2024-11-12 |
| SOT89_115 | Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2025-01-16 |
| PBSS4021NX_Nexperia_Product_Reliability | PBSS4021NX Nexperia Product Reliability | Quality document | 2024-04-23 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PBSS4021NX | PBSS4021NX SPICE model | SPICE model | 2024-08-27 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSS4021NX | PBSS4021NX SPICE model | SPICE model | 2024-08-27 |
| SOT89 | 3D model for products with SOT89 package | Design support | 2018-12-05 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PBSS4021NX | PBSS4021NX,115 | 934063402115 | Active | SOT89_115 | 1,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.