可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| GAN140-650FBE | GAN140-650FBEZ | 934665903332 | SOT8075-1 | 訂單產(chǎn)品 |
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Click here for more informationGAN140-650FBE
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5?mm?x?6?mm package
The GAN140-650FBE is a general purpose 650 V, 140 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance.
Features and benefits
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Qualified for standard applications
ESD protection
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Low package inductance and low package resistance
Applications
High power density and high efficiency power conversion
AC-to-DC converters, totem pole PFC
DC-to-DC converters
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
Solar (PV) inverters
Class D audio amplifiers, TV PSU and LED drivers
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN140-650FBE | SOT8075-1 | DFN5060-5 | Production | e-mode | N | 1 | 650 | 150 | 17 | 1.2 | 113 | 1.7 | N | 125 | 41 | 2023-02-22 |
封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GAN140-650FBE | GAN140-650FBEZ (934665903332) |
Active | 140IFBE |
DFN5060-5 (SOT8075-1) |
SOT8075-1 | SOT8075-1_332 |
環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| GAN140-650FBE | GAN140-650FBEZ | GAN140-650FBE |
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文檔 (21)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| GAN140-650FBE | 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5?mm?x?6?mm package | Data sheet | 2023-04-19 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90041 | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
| SOT8075-1 | 3D model for products with SOT8075-1 package | Design support | 2023-04-13 |
| SOT8075-1 | plastic thermal enhanced small outline package; no leads; 5 terminals; body: 5 × 6 × 0.9 mm | Package information | 2023-03-21 |
| SOT8075-1_332 | DFN5060-5; Reel dry pack for SMD, 13"; Q2/T3 product orientation | Packing information | 2023-04-18 |
| GAN140-650FBE | GAN140-650FBE SPICE model | SPICE model | 2023-04-12 |
| GAN140-650FBE_LTspice | GAN140-650FBE LTspice SPICE model | SPICE model | 2025-05-01 |
| GAN140-650FBE_SIMetrix | GAN140-650FBE SIMetrix SPICE model | SPICE model | 2025-05-01 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| CauerModel_GAN140-650FBE | Cauer model GAN140-650FBE | Thermal model | 2023-04-12 |
| FosterModel_GAN140-650FBE | Foster model GAN140-650FBE | Thermal model | 2023-04-12 |
| GAN140-650FBE | GAN140-650FBE RC thermal model | Thermal model | 2023-04-12 |
| GAN140-650FBE_Cauer | GAN140-650FBE Cauer model | Thermal model | 2023-04-12 |
| GAN140-650FBE_Foster | GAN140-650FBE Foster model | Thermal model | 2023-04-12 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮書: 功率GaN技術(shù)： 高效功率轉(zhuǎn)換的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT8075-1 | 3D model for products with SOT8075-1 package | Design support | 2023-04-13 |
| GAN140-650FBE | GAN140-650FBE SPICE model | SPICE model | 2023-04-12 |
| GAN140-650FBE_LTspice | GAN140-650FBE LTspice SPICE model | SPICE model | 2025-05-01 |
| GAN140-650FBE_SIMetrix | GAN140-650FBE SIMetrix SPICE model | SPICE model | 2025-05-01 |
| CauerModel_GAN140-650FBE | Cauer model GAN140-650FBE | Thermal model | 2023-04-12 |
| FosterModel_GAN140-650FBE | Foster model GAN140-650FBE | Thermal model | 2023-04-12 |
| GAN140-650FBE | GAN140-650FBE RC thermal model | Thermal model | 2023-04-12 |
| GAN140-650FBE_Cauer | GAN140-650FBE Cauer model | Thermal model | 2023-04-12 |
| GAN140-650FBE_Foster | GAN140-650FBE Foster model | Thermal model | 2023-04-12 |
訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| GAN140-650FBE | GAN140-650FBEZ | 934665903332 | Active | SOT8075-1_332 | 2,500 |
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樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.