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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

NGW30T65M3DFP

650 V, 30 A trench field-stop IGBT with full rated silicon diode

The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.

Features

  • Device current is rated at 30 A

  • Low conduction and switching losses

  • Stable and tight parameters for easy parallel operation

  • Maximum junction temperature 175 °C

  • Fully rated and fast reverse recovery diode

  • 5 μs short circuit withstand time

  • HV-H3TRB qualified

Applications

  • Motor drives for industrial and consumer appliances

    • Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.

  • Power inverters, such as

    • Uninterruptible Power Supply (UPS) inverter

    • EV charging converter

  • Induction heating

  • Welding

參數類型

型號 Product status VCE [max] (V) IC [typ] (A) Configuration tsc [max] (μs) Tj [min] (°C) Tj [max] (°C) Package version Package name
NGW30T65M3DFP Production 650 30 MS 5 -40 175 SOT429-2 TO-247-3L

封裝

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
NGW30T65M3DFP NGW30T65M3DFPQ
(934668335127)
Active W30T65M3DFP SOT429-2
TO-247-3L
(SOT429-2)
SOT429-2 SOT429-2_127

環(huán)境信息

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
NGW30T65M3DFP NGW30T65M3DFPQ NGW30T65M3DFP rohs rhf
品質及可靠性免責聲明

文檔 (5)

文件名稱 標題 類型 日期
NGW30T65M3DFP 650 V, 30 A trench field-stop IGBT with full rated silicon diode Data sheet 2025-01-17
AN90042 Nexperia 650 V (G3) IGBT product introduction Application note 2025-03-06
SOT429-2_TO-247-TL Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Marcom graphics 2023-11-15
SOT429-2 Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Package information 2022-02-10
SOT429-2_127 TO-247-3L; Tube pack; Standard product orientation Packing information 2023-04-03

支持

如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

No documents available

訂購、定價與供貨

型號 Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購買
NGW30T65M3DFP NGW30T65M3DFPQ 934668335127 Active SOT429-2_127 450

樣品

作為 Nexperia 的客戶,您可以通過我們的銷售機構訂購樣品。

如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經銷商處購買
NGW30T65M3DFP NGW30T65M3DFPQ 934668335127 SOT429-2 訂單產品
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