可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PSMN1R1-100CSE | PSMN1R1-100CSEJ | 934666621118 | SOT8005A | 訂單產(chǎn)品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationPSMN1R1-100CSE
N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package
N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R1-100CSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212i).
PSMN1R1-100CSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses and deliver optimum efficiency when turned fully ON.
Features and benefits
Fully optimized Safe Operating Area (SOA) for superior linear mode operation
Low RDSon for low I2R conduction losses
CCPAK1212i package for applications that demand the highest performance and reliability
Inverted package, suitable for top-side cooling
CCPAK1212i is JEDEC listed package for open market and 2nd source compatibility
Applications
Hot swap
Load switch
Soft start
E-fuse
Telecommunication systems based on a 48 V backplane/supply rail
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN1R1-100CSE | SOT8005A | CCPAK1212i | Production | N | 1 | 100 | 1.09 | 175 | 430 | 48.2 | 339 | 1550 | 110 | 2.8 | N | 26043 | 5635 | 2024-02-07 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSMN1R1-100CSE | PSMN1R1-100CSEJ (934666621118) |
Active | XP1E1S10C |
CCPAK1212i (SOT8005A) |
SOT8005A | 暫無(wú)信息 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSMN1R1-100CSE | PSMN1R1-100CSEJ | PSMN1R1-100CSE |
|
|
Series
文檔 (22)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSMN1R1-100CSE | N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Data sheet | 2024-12-06 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-02-18 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-03-20 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN50005 | Paralleling power MOSFETs in high power applications | Application note | 2021-09-13 |
| AN50005_translated_20230317 | 大電力アプリケーションにおけるパワーMOSFETの並列接続 | Application note | 2023-04-03 |
| AN50006 | Power MOSFETs in linear mode | Application note | 2022-04-12 |
| AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |
| AN90003 | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
| AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-04-22 |
| SOT8005A | 3D model for products with SOT8005A package | Design support | 2024-11-20 |
| nexperia_document_CCPAK-MOSFETs_2024_Chinese | CCPAK MOSFET LEAFLET CN | Leaflet | 2024-12-02 |
| nexperia_document_CCPAK_MOSFETs_2024 | Nexperia CCPAK MOSFETs | Leaflet | 2024-11-19 |
| PSMN1R1-100CSE_LTspice_V1 | PSMN1R1-100CSE Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2024-10-28 |
| SOT8005A | Plastic, surface mounted copper clip package (CCPAK1212i); 12 terminals;2.0 mm pitch, 12 mm × 12 mm × 2.5 mm body | Package information | 2025-04-14 |
| T12_SOT8005A_PSMN1R1-100CSE_Nexperia_Quality_Reliability_document | T12_SOT8005A_PSMN1R1-100CSE_Nexperia_Quality_Reliability_document | Quality document | 2024-11-01 |
| PSMN1R1-100CSE | PSMN1R1-100CSE SPICE model | SPICE model | 2024-09-12 |
| PSMN1R1-100CSE | PSMN1R1-100CSE RC thermal model | Thermal model | 2024-09-10 |
| PSMN1R1-100CSE_Cauer | PSMN1R1-100CSE Cauer model | Thermal model | 2024-09-10 |
| PSMN1R1-100CSE_Foster | PSMN1R1-100CSE Foster model | Thermal model | 2024-09-10 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSMN1R1-100CSE_LTspice_V1 | PSMN1R1-100CSE Precision ElectroThermal (PET) LTspice model | PET SPICE model | 2024-10-28 |
| PSMN1R1-100CSE | PSMN1R1-100CSE SPICE model | SPICE model | 2024-09-12 |
| PSMN1R1-100CSE | PSMN1R1-100CSE RC thermal model | Thermal model | 2024-09-10 |
| PSMN1R1-100CSE_Cauer | PSMN1R1-100CSE Cauer model | Thermal model | 2024-09-10 |
| PSMN1R1-100CSE_Foster | PSMN1R1-100CSE Foster model | Thermal model | 2024-09-10 |
| SOT8005A | 3D model for products with SOT8005A package | Design support | 2024-11-20 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PSMN1R1-100CSE | PSMN1R1-100CSEJ | 934666621118 | Active | 暫無(wú)信息 | 1,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.