可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| PSMN4R5-80YSF | PSMN4R5-80YSFX | 934661575115 | SOT669 | 訂單產(chǎn)品 |
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Click here for more informationPSMN4R5-80YSF
NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56
NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.
Features and benefits
Low Qrr for higher efficiency and lower spiking
100 A ID(max) – demonstrated continuous current rating
Low QG × RDSon FOM for high efficiency switching applications
Strong avalanche energy rating (Eas)
Avalanche rated and 100% tested
Ha-free and RoHS compliant LFPAK56 package
Wave-solderable
Applications
Synchronous rectifier in AC-DC and DC-DC
Primary side switch in DC-DC
BLDC motor control
USB-PD adapters
Full-bridge and half-bridge applications
Flyback and resonant topologies
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN4R5-80YSF | SOT669 | LFPAK56; Power-SO8 | Production | N | 1 | 80 | 4.5 | 175 | 100 | 10.7 | 60 | 238 | 24.5 | 3 | N | 4292 | 1144 | 2020-10-14 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSMN4R5-80YSF | PSMN4R5-80YSFX (934661575115) |
Active | 4F5S80Y |
LFPAK56; Power-SO8 (SOT669) |
SOT669 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT669_115 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSMN4R5-80YSF | PSMN4R5-80YSFX | PSMN4R5-80YSF |
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文檔 (29)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSMN4R5-80YSF | NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 | Data sheet | 2023-03-13 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-02-18 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-03-20 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN50005 | Paralleling power MOSFETs in high power applications | Application note | 2021-09-13 |
| AN50005_translated_20230317 | 大電力アプリケーションにおけるパワーMOSFETの並列接続 | Application note | 2023-04-03 |
| AN50014 | Understanding the MOSFET peak drain current rating | Application note | 2022-03-28 |
| AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |
| AN90003 | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
| AN90011 | Half-bridge MOSFET switching and its impact on EMC | Application note | 2025-02-10 |
| AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
| AN90019 | LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layout | Application note | 2020-07-20 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-04-22 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| SOT1023 | 3D model for products with SOT1023 package | Design support | 2017-06-29 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| PSMN_NextPower80V_SL | PSMN NextPower80 V, SL, Precision ElectroThermal (PET) model | PET SPICE model | 2023-06-13 |
| SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2025-03-20 |
| SOT669_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-05-10 |
| Reliability_information_t12_sot669 | Reliability information t12 sot669 | Quality document | 2022-08-11 |
| T12_SOT669_PSMN4R5-80YSF_Nexperia_Quality_document | PSMN4R5-80YSF Quality document | Quality document | 2023-05-15 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PSMN4R5-80YSF | PSMN4R5-80YSF FloTherm model | Thermal model | 2021-11-09 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT1023 | 3D model for products with SOT1023 package | Design support | 2017-06-29 |
| PSMN_NextPower80V_SL | PSMN NextPower80 V, SL, Precision ElectroThermal (PET) model | PET SPICE model | 2023-06-13 |
| PSMN4R5-80YSF | PSMN4R5-80YSF FloTherm model | Thermal model | 2021-11-09 |
| SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| PSMN4R5-80YSF | PSMN4R5-80YSFX | 934661575115 | Active | SOT669_115 | 1,500 |
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樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.