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Click here for more informationPXN2R2-30RLA
N-channel 30 V, 2.2 mOhm, logic level Trench MOSFET in MLPAK56
General purpose MOSFET for standard applications, 118 A, logic level N-channel enhancement mode Power MOSFET in MLPAK56 package.
Features and benefits
Logic level compatibility
Trench MOSFET technology
Thermally efficient package in a small form factor (5.15 mm x 6.15 mm footprint)
Applications
Secondary side synchronous rectification
DC-to-DC converters
Battery Management System
Motor drive
Load switching
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PXN2R2-30RLA | SOT8038-1 | MLPAK56 | End of life | N | 1 | 30 | 2.2 | 150 | 118 | 58 | 1.7 | N | 2023-10-18 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PXN2R2-30RLA | PXN2R2-30RLAJ (934667452118) |
Obsolete |
MLPAK56 (SOT8038-1) |
SOT8038-1 | 暫無(wú)信息 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PXN2R2-30RLA | PXN2R2-30RLAJ | PXN2R2-30RLA |
|
|
Series
文檔 (20)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10441 | Level shifting techniques in I2C-bus design | Application note | 2020-02-11 |
| AN11119 | Medium power small-signal MOSFETs in DC-to-DC conversion | Application note | 2013-05-07 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-02-18 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2025-03-20 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN50005 | Paralleling power MOSFETs in high power applications | Application note | 2021-09-13 |
| AN50006 | Power MOSFETs in linear mode | Application note | 2022-04-12 |
| AN50014 | Understanding the MOSFET peak drain current rating | Application note | 2022-03-28 |
| AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |
| AN90011 | Half-bridge MOSFET switching and its impact on EMC | Application note | 2025-02-10 |
| AN90017 | Load switches for mobile and computing applications | Application note | 2020-09-02 |
| AN90032 | Low temperature soldering, application study | Application note | 2022-02-22 |
| AN90059 | Power MOSFET gate driver fundamentals | Application note | 2025-04-22 |
| SOT8038-1 | 3D model for products with SOT8038-1 package | Design support | 2024-07-12 |
| SOT8038-1 | plastic thermal enhanced surface mounted package;mini leads; 8 terminals; pitch 1.27 mm; 6 x 5 x 1.0 mm body | Package information | 2024-07-11 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT8038-1 | 3D model for products with SOT8038-1 package | Design support | 2024-07-12 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.