Nexperia launches industry leading automotive-qualified 1200 V silicon carbide MOSFETs in D2PAK-7 packaging
五月 06, 2025Nijmegen -- AEC-Q101-qualified SMD devices combine unmatched thermal stability and easy assembly
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Nexperia today announced a range of highly efficient and robust automotive qualified silicon carbide (SiC) MOSFETs with RDS(on) values of 30, 40 and 60 mΩ. These devices (NSF030120D7A0-Q, NSF040120D7A1-Q, NSF060120D7A0-Q), which deliver industry-leading figures-of-merit (FoM), were previously offered in industrial grade and have now been awarded AEC-Q101 certification. This makes them suitable for automotive applications like onboard chargers (OBC) and traction inverters in electric vehicles (EV) as well as for DC-DC converters, heating ventilation and air-conditioning systems (HVAC). These switches are housed in the increasingly popular surface mounted D2PAK-7 package which is more suitable for automated assembly operations than through-hole devices.
RDS(on) is a critical performance parameter for SiC MOSFETs as it impacts conduction losses. However, concentrating on the nominal value, neglects the fact that it can increase by more than 100% as device operating temperatures rise, resulting in considerable rise of conduction losses. The temperature stability is even more critical when SMD package technologies are used compared to through-hole technology since devices are cooled through the PCB. Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and leveraged the features of its innovative process technology to ensure that its new SiC MOSFETs offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25 °C to 175 °C. This feature enables customers to address higher output power in their applications achieved with a higher nominal 25°C rated RDS(on) from Nexperia compared to other vendors without sacrificing performance.
“This feature allows to get more power out of the selected Nexperia SiC MOSFET devices compared to similarly rated RDS(on) devices from other vendors, delivering a clear cost advantage for customers on semiconductor level. Additionally, relaxed cooling requirements, more compact passive components, and higher achievable efficiency allow customers more degrees of freedom in their design and lower total cost of ownership. We’re especially excited that these products are now available for the automotive market, where their performance and efficiency benefits can make a real difference in next-generation vehicle designs”, says Edoardo Merli, SVP and Head of Business Group Wide Bandgap, IGBT & Modules (WIM).
Nexperia is planning to release automotive-qualified versions of its 17 mΩ and 80 mΩ RDS(on) SiC MOSFETs in 2025.
To learn more about Nexperia’s silicon carbide MOSFETs visit: www.nexperia.com/sic-mosfets
About Nexperia
Headquartered in the Netherlands, Nexperia is a global semiconductor company with a rich European history and over 12,500 employees across Europe, Asia, and the United States. As a leading expert in the development and production of essential semiconductors, Nexperia’s components enable the basic functionality of virtually every commercial electronic design in the world – from automotive and industrial to mobile and consumer applications.
The company serves a global customer base, shipping more than 100 billion products annually. These products are recognized as benchmarks in efficiency – in process, size, power, and performance. Nexperia's commitment to innovation, efficiency, sustainability, and stringent industry requirements is evident in its extensive IP portfolio, its expanding product range, and its certification to IATF 16949, ISO 9001, ISO 14001 and ISO 45001 standards.
For press information, please contact:
Nexperia
Anne Proch
Tel: +49 160 916 884 18
Email: anne.proch@nexperia.com
Publitek
Lucy Sorton
Tel: +44 07966 301949
E-mail: lucy.sorton@publitek.com