主要特性和優(yōu)勢(shì)
- 更小電路板空間、更高性能
- 高集電極電流增益hFE（高IC
- 時(shí)）低集電極-發(fā)射極飽和電壓VCEsat及相應(yīng)的電阻RCEsat（最低<30 mΩ）
- SOT89、SOT223、TO-126和DPAK等較大功率、中等功率晶體管的高性價(jià)比替代選擇
- 高集電極電流增益IC和ICM
關(guān)鍵應(yīng)用
- LAN和ADSL系統(tǒng)的電源開關(guān)/中等功率DC-DC轉(zhuǎn)換
- 反向器應(yīng)用，如TFT顯示屏
- 中等功率外設(shè)驅(qū)動(dòng)器，如風(fēng)扇、馬達(dá)
- 電池充電器/負(fù)載開關(guān)
- 適合數(shù)碼相機(jī)與移動(dòng)電話的頻閃閃光燈
參數(shù)搜索
Low VCEsat (BISS) transistors double
數(shù)據(jù)加載中，請(qǐng)稍候...參數(shù)搜索不可用。
產(chǎn)品
| 型號(hào) | 描述 | 狀態(tài) | 快速訪問 |
|---|---|---|---|
| PBSS2515YPN-Q | 15 V low VCEsat NPN/PNP transistor | Production | |
| PBSS4112PAN-Q | 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor | Production | |
| PBSS4112PANP-Q | 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor | Production | |
| PBSS4130PAN-Q | 30 V, 1 A NPN/NPN low VCEsat transistor | Production | |
| PBSS4130PANP | 30 V, 1 A NPN/PNP low VCEsat transistor | Production | |
| PBSS4140DPN-Q | 40 V low VCEsat NPN/PNP transistor | Production | |
| PBSS4160DS-Q | 60 V, 1 A NPN/NPN low VCEsat transistor | Production | |
| PBSS4160PAN | 60 V, 1 A NPN/NPN low VCEsat transistor | Production | |
| PBSS4160PAN-Q | 60 V, 1 A NPN/NPN low VCEsat transistor | Production | |
| PBSS4160PANP-Q | 60 V, 1 A NPN/PNP low VCEsat transistor | Production | |
| PBSS4160PANPS | 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor | Production | |
| PBSS4160PANS | 60 V, 1 A NPN/NPN low VCEsat transistor | Production | |
| PBSS4160PANS-Q | 60 V, 1 A NPN/NPN low VCEsat transistor | Production | |
| PBSS4220PANS-Q | 20 V, 2 A NPN/NPN low VCEsat double transistor | Production | |
| PBSS4230PAN | 30 V, 2 A NPN/NPN low VCEsat transistor | Production | |
| PBSS4230PAN-Q | 30 V, 2 A NPN/NPN low VCEsat transistor | Production | |
| PBSS4230PANP | 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor | Production | |
| PBSS4240DPN | 40 V low VCEsat NPN/PNP transistor | Production | |
| PBSS4260PAN | 60 V, 2 A NPN/NPN low VCEsat transistor | Production | |
| PBSS4260PAN-Q | 60 V, 2 A NPN/NPN low VCEsat transistor | Production | |
| PBSS4260PANP | 60 V, 2 A NPN/PNP low VCEsat transistor | Production | |
| PBSS4260PANP-Q | 60 V, 2 A NPN/PNP low VCEsat transistor | Production | |
| PBSS4260PANPS-Q | 60 V, 2 A NPN/PNP low VCEsat double transistor | Production | |
| PBSS4260PANS-Q | 60 V, 2 A NPN/NPN low VCEsat double transistor | Production | |
| PBSS4350SPN | 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor | EndOfLife | |
| PBSS4350SS | 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor | EndOfLife | |
| PBSS5112PAP | 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor | EndOfLife | |
| PBSS5130PAP-Q | 30 V, 1 A PNP/PNP low VCEsat transistor | Production | |
| PBSS5160DS-Q | 60 V, 1 A PNP/PNP low VCEsat transistor | Production | |
| PBSS5160PAP | 60 V, 1 A PNP/PNP low VCEsat transistor | Production | |
| PBSS5160PAPS | 60 V, 1 A PNP/PNP low VCEsat transistor | Production | |
| PBSS5220PAPS-Q | 20V, 2 A PNP/PNP low VCEsat double transistor | Production | |
| PBSS5230PAP | 30 V, 2 A PNP/PNP low VCEsat double transistor | Production | |
| PBSS5255PAPS-Q | 55V, 2A PNP/PNP low VCEsat (BISS) double transistor | Production | |
| PBSS5260PAP | 60 V, 2 A PNP/PNP low VCEsat double transistor | Production | |
| PBSS5260PAPS | 60 V, 2 A PNP/PNP low VCEsat double transistor | Production | |
| PBSS5350SS | 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor | EndOfLife |
Visit our documentation center for all documentation
Marcom graphics (1) |
|||
|---|---|---|---|
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
| DFN2020D-6_SOT1118D_mk.png | plastic, thermally enhanced ultra thin and small outline package; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
Selection guide (1) |
|||
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
| Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
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