可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PBSS4260PANPS-Q | PBSS4260PANPS-QX | 934669149115 | SOT1118D | 訂單產(chǎn)品 |
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Click here for more informationPBSS4260PANPS-Q
60 V, 2 A NPN/PNP low VCEsat double transistor
NPN/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN/NPN complement: PBSS4260PANS-Q
PNP/PNP complement: PBSS5260PAPS-Q
Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
Exposed heat sink for excellent thermal and electrical conductivity
High efficiency due to less heat generation
Suitable for Automatic Optical Inspection (AOI) of solder joints
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Load switch
Battery-driven devices
Power management
Charging circuits
LED lighting
Power switches (e.g. motors, fans)
參數(shù)類型
| 型號 | Package version | Package name | Size (mm) | Product status | channel type (e) | Nr of transistors | VCEO [max] (V) | IC [max] (A) | VCEsat [max] (NPN) (mV) | VCEsat [max] (PNP) (mV) | RCEsat@IC [max] (mΩ) | hFE [min] | fT [typ] (MHz) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS4260PANPS-Q | SOT1118D | DFN2020D-6 | 2 x 2 x 0.65 | Production | NPN/PNP | 2 | 60 | 2 | 350 | -500 | 310 | 250 | 140 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS4260PANPS-Q | PBSS4260PANPS-QX (934669149115) |
Active | 3D |
DFN2020D-6 (SOT1118D) |
SOT1118D |
REFLOW_BG-BD-1
|
暫無信息 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS4260PANPS-Q | PBSS4260PANPS-QX | PBSS4260PANPS-Q |
|
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文檔 (9)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSS4260PANPS-Q | 60 V, 2 A NPN/PNP low VCEsat double transistor | Data sheet | 2025-04-07 |
| AN90063 | Questions about package outline drawings | Application note | 2025-03-12 |
| Nexperia_asset_document_brochure_autoDFN_CN_LR | 小巧輕便的汽車 二極管和晶體管 | Brochure | 2022-04-26 |
| SOT1118D | 3D model for products with SOT1118D package | Design support | 2020-01-22 |
| Nexperia_AutoDFN_factsheet_2022 | Small & light automotive diodes and transistors | Leaflet | 2022-04-13 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN2020D-6_SOT1118D_mk | plastic, thermally enhanced ultra thin and small outline package; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
| SOT1118D | plastic, leadless thermally enhanced ultra thin and small outline package with side-wettable flanks (SWF); 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-06-02 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT1118D | 3D model for products with SOT1118D package | Design support | 2020-01-22 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PBSS4260PANPS-Q | PBSS4260PANPS-QX | 934669149115 | Active | 暫無信息 | 3,000 |
|
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.